Transistors Product Introduction

TOSHIBA has a complete line-up of transistors ranging from general-purpose small signal transistors to power transistors mainly used for power amplification. It also provides a wide range of surface mounting type transistors responding to higher performance and higher density of electronic devices.

Transistors: MOS Series

MOSFET is short for Metal Oxide Semiconductor Field Effect Transistor. Basically, it has 3 terminal electrodes, which are G: Gate, D: Drain, and S: Source. The portion between D and S is turned on and off by applying voltage to G. Compared with the bipolar type, the MOS type features higher-speed operation and lower loss.

• Small-Signal MOSFETs
• Power MOSFETs

Small-Signal MOSFETs

Small-Signal MOSFETs (Single/Dual)

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• High Current Series ：1.5V/1.8V Drive Type
• High Current Series ： 2.0V/2.5V Drive Type
• High Current Series　：3.3V/4.0V/4.5V Drive Type
• Standard series：1.5V/1.8V Drive Type
• Standard Series　：2.0V/2.5V Drive Type
• Standard Series：3.3V/4.0V/4.5V Drive Type

Search by Packages

• CST3
• CST4
• ES6
• ESM
• ESV
• MINI
• S-MINI
• SSM
• TESM
• TO-92
• TSM
• UF6
• UFM
• US6
• USM
• USV
• VESM

Junction FETs (Single/Dual)

• Junction FETs (Surface-Mount type)
• Junction FETs (Leaded type)
• Junction FETs (Electret Condence Microphone)

Power MOSFETs

Search by feature

• Drain-Source Voltage : V_DSS ≤ 30V
• Drain-Source Voltage : 30V < V_DSS ≤ 60V
• Drain-Source Voltage : 60V < V_DSS ≤ 150V
• Drain-Source Voltage : 150V < V_DSS ≤ 250V
• Drain-Source Voltage : 250V < V_DSS ≤ 500V
• Drain-Source Voltage : 500V < V_DSS ≤ 700V
• Drain-Source Voltage : 700V < V_DSS

»Toshiba is preparing for Multi-chip module type.

Search by Packages

• TO-220(W)
• DP
• LSTM
• New PW-Mold2
• PS-8
• PW-Mini
• PW-Mold
• SOP-8
• SOP Advance
• STP
• TFP
• TP-3P(L)
• TO-3P(N)
• TO-3P(N)IS
• TO-3P(SM)
• TO-3P(W)
• TO-220AB
• TO-220FL
• TO-220NIS
• TO-220SIS
• TO-220SM
• TPS
• TSSOP-8
• TSSOP Advance
• VS-6
• VS-8

• QFN56

Transistors: Bipolar

• Bipolar Small-Signal Transistors
• Bipolar Power Transistors

Bipolar Small-Signal Transistors

General-Purpose Transistors (Leaded Type)

Search by Polarity and Packages

	TO-92	MINI
NPN	○	○
PNP	○	○

General-Purpose Transistors (Surface-Mount Type)

Search by Polarity and Packages

	fSM	VESM	TESM	ESM
NPN	○	○	○	○
PNP	○	○	○	○

	SSM	USM	TSM	S-MINI
NPN	○	○	○	○
PNP	○	○		○

General-Purpose Transistors (Dual)

Search by Polarity and Internal Connection

	fS6	ESV	USV	SMV
NPN ×2	○		○	○
PNP ×2	○		○	○
PNP+NPN	○	○		○

	ES6	US6	SM6
NPN ×2	○	○	○
PNP ×2	○	○	○
PNP+NPN	○	○	○

Bias Resistor Built-in Transistors (Single)

Search by Polarity and Packages

Ratings V_CEO= 20V, I_C= 50mA

	ｆSM
NPN	○
PNP	○

Ratings V_CEO= 50V, I_C= 100mA

	VESM	TESM	ESM	SSM
NPN	○	○	○	○
PNP	○	○	○	○

	USM	S-MINI	MINI	TO-92
NPN	○	○	○	○
PNP	○	○	○	○

Ratings V_CEO= 12V, I_C= 500mA

	USM
NPN	○
PNP	○

Ratings V_CEO= 50V, I_C= 800mA : High Current Type

	S-MINI	MINI
NPN	○	○
PNP	○	○

Ratings V_CEO= 20V, I_C= 300mA : Muting Switch Type

	S-MINI	MINI
NPN	○	○

Bias Resistor Built-in Transistors (Dual)

Search by Polarity and Packages

(Dual, General-Purpose (5 Pin))

	ESV	USV	SMV
NPN ×2 Emitter common	○	○	○
PNP ×2 Emitter common	○	○	○
NPN+PNP Collector-base connection	○	○	-

(Dual, General-Purpose(6 Pin))

	fS6	ES6	US6	SM6
NPN ×2	○	○	○	○
PNP ×2	○	○	○	○
NPN+PNP	○	○	○
PNP+NPN		○	○	○

Bipolar Power Transistors

Radio-Frequency Switching Power Transistors (2SA Series/2SC Series)

Search by Characters

		VCEO(V)
		10/15		18/20		25/30		40/45		50/60
		NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP
Ic(A)	0.02 to2	○	○	○	○	○	○	○	○	○	○
	2.5 to5	○	○	○	○	○		○	○	○	○
	7 to15				○					○	○

		VCEO(V)
		80		100		120		140/150		160
		NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP
Ic(A)	0.02 to2	○	○	○		○	○	○	○	○	○
	2.5 to5	○	○
	7 to15	○	○			○	○	○	○	○	○

		VCEO(V)
		180/200		200/230		250		300		370/400
		NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP
Ic(A)	0.02 to2	○	○	○	○	○		○	○	○	○
	2.5 to5									○
	7 to15	○	○	○	○					○

		VCEO(V)
		450		550/600		800		1000/1200		1500
		NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP
Ic(A)	0.02 to2	○		○	○	○		○		○
	2.5 to5					○
	7 to15	○				○

Low-Frequency Power Transistors(2SB Series/2SD Series)

Search by Characters

		VCEO(V)
		20 to65		80 to160		200 to450
		NPN	PNP	NPN	PNP	NPN	PNP
Ic(A)	0.8 to3	○	○	○	○
	more than 3	○	○	○	○	○

Transistors for Power Amps

		PW-MOLD		PW-MINI		TSM		TO-3P/92/ 126/220		MSTM/ LSTM		TPL
		NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP	NPN	PNP
Ic(A)	0.1 to3	○	○	○	○	○	○	○	○	○	○	○	○
	3 to15	○	○	○	○	○		○	○

Transistors for Switching Power Supply

For AC/DC Converters

		VCBO(V) Maximum Ratings(Ta=25°C)
		400～500	600	800～1000
Ic(A)	0.8 to2	○	○	○
	3 to10		○	○

For Personal Equipments

		VCEO(V)
		-120 to-50	-40 to0	10 to50	100 to120
Ic(A)	-4 to-2.5	○	○
	-2 to0	○	○
	1 to2			○	○
	more than 2			○	○

IGBT

IGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part. Suitable for high voltage and high current, it is capable of controlling high power with less drive power. Its applications include induction heating cooking equipment.

Discrete IGBT

Search by Characters

VCES(V) Ta=25°C
400	600	900 to1500
○	○	○

Strobe Flash IGBTs

Combination Products of Different Type Devices

These devices include different product types in single packages, such as a combination of bipolar transistor and MOSFET or transistor and diode. For example, some load switches use a MOSFET with low ON resistance for the main switch and a bipolar transistor for its driver.

• Combination Products of Different Type Devices (MOSFET + SBD)
• Combination Products of Different Type Devices(Bipolar Transitor/MOSFET/Diode)

Power Transistor Module

A power transistor module incorporates 3 or more power transistor chips in a single package. It is mainly used for the circuits which require chips of identical characteristics, such as driving a motor. Suitable products such as bipolar transistors, MOSFETs, etc. can be selected as incorporated power transistors.

Full-mold Type S-10

Full-mold Type S-12

With Insulated Heat sink F-12

Power MOSFET Modules

Topics

• Power MOSFET U-MOS V-H process MOSBD Series: TPCA8A04-H, TPC8A04-H ( 22 Oct, 2008 )
• High-Side Power MOSFETs for Synchronous Rectification DC-DC Converters With Reduced Voltage Spike : TPCA8031-H, TPC8038-H ( 11 Sep, 2008 )
• High-Side Power MOSFETs for Synchronous Rectification DC-DC Converters : TPCA8030-H, TPC8037-H ( 11 Sep, 2008 )
• 1.5 V Small-Signal MOSFETs (SMOS) : SSM3K36xx(Nch), SSM3J36xx(Pch) ( 25 Aug, 2008 )
• 2021-Size SMOS-SBD : SSM5GxxTU/SSM5HxxTU ( 25 Aug, 2008 )
• High-Voltage Bipolar Switching Transistors : 2SC6136/2SC6142 ( 26 Jun, 2008 )
• 2021-Size Semi-Power MOSFETs (SMOS): SSM6NxxTU/SSM6PxxTU/SSM6LxxTU ( 09 Jun, 2008 )
• 1.2-V Small-Signal MOSFETs(SMOS) : SSM3K35xx(N-ch), SSM3J35xx(P-ch) ( 13 May, 2008 )
• 1.5-V N-Channel Small-Signal MOSFETs (SMOS) : SSM3K36xx ( 22 Apr, 2008 )
• Latest-Generation Power MOSFET for Synchronous DC-DC Converters UMOS VI-H1 : TPCA8028-H ( 16 Apr, 2008 )
• UMOS V-H Power MOSFET Series TPCA8A02-H and TPC8A03-H MOSBDs ( 14 Apr, 2008 )
• Power MOSFETs TK40D10J1 and TK40A10J1 for Synchronous Rectification ( 06 Mar, 2008 )
• 1.2-V N-channel Small-Signal MOSFETs (SMOS) : SSM3K35xx ( 08 Feb, 2008 )
• Discrete IGBTs for Soft Switching : GT40J321, GT50J328, GT50M322 ( 12 Dec, 2007)
• Medium-Current Transistors featuring Small 2021-Sized Package ( 05 Sep, 2007 )
• 2021 Size Low On-resistance Middle Power MOSFETs: SSM3KxxxTU, SSM3JxxxTU ( 26 Apr, 2007 )
• IGBT for strobe flash control with series connection: GT8G136 ( 24 Apr, 2007 )
• Nch 1.5V drive small-signal MOSFET(S-MOS) : SSM6KxxFE/TU, SSM3KxxTU/T ( 24 Apr, 2007 )
• Discrete IGBT for PDP TV : GT30F122, GT30G122 ( 22 Feb, 2007 )
• Power Bipolar Transistors for High Voltage Power Supply Equipment : 2SC6075, 2SC6076, 2SC6077, 2SC6078, 2SC6079 and 2SC6087 (6products) ( 22 Feb, 2007 )
• 2021-size Low On-Resistance Semi-power MOSFETs ( 21 Feb, 2006 )
• Multi-chip Module for Step-down DC-DC Converters ( 26 Jan, 2006 )
• 2021-size Low On-Resistance Semi-power MOSFETs ( 24 Jan, 2006 )
• New 200mm Wafer-based Production Line Installed at Iwate Toshiba Electronics ( 27 Oct, 2005 )
• High Voltage DTMOS Power MOSFET Using a Super Junction Structure ( 27 Jun, 2005 )
• Lead-Frame-Chip-Scale-Package ( 19 May, 2005 )
• MP66 Series (500V/5A 6-in-1 module) ( 25 Apr, 2005 )
• Power MOSFET U-MOSIII N-ch 60 V Low R_DS(ON) Series ( 15 Feb, 2005 )

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      • Transistors：MOS
      • Transistors：Bipolar
      • IGBT
      • Combination Products of Different Type Devices
      • Power Transistor Modules
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