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Radio-Frequency Devices:Product Introduction

Radio-Frequency Devices Product Introduction

TOSHIBA radio-frequency devices range widely from small-signal diodes to power amplifier modules for power amplification. It also has a complete line-up of surface mounting parts responding to miniaturized higher-performance electronic devices.

Select from classification.

  • MOS
  • Bipolar
  • Diode
  • MMIC
  • Power Amp IC

Select from applications.

  • AM Tuners
  • FM Tuners
  • Digital Terrestrial Tuners
  • Satellite Broadcast Tuners
  • FRS,GMRS
  • GPS
  • 800-MHz Digital Cell Phones
  • 2-GHz Digital Cell Phones
  • 900MHz,2.4GHz/5.8GHz band cordless phone
  • 2.4G wireless LAN,Bluetooth(TM)

Radio-Frequency : MOS Series

TOSHIBA radio-frequency MOSFETs are of dual gate type with 2 gate terminals (G). A radio-frequency signal is input to Gate 1 (G1) and a gain control voltage VG2 is applied to the other Gate 2 (G2).

Radio-Frequency Small-Signal FETs

Radio-Frequency MOSFETs
Radio-Frequency Junction FETs (Junction Field Effect Transistor)
Called a junction type field-effect transistor. It is mainly used for AM/FM band radio-frequency amplification circuits.

Radio-Frequency Power MOSFETs

Developed for amplifying transmission power for VHF and UHF TV broadcasting equipment, and 800 MHz cell phones. It features high gain and high efficiency.

Radio-Frequency Power MOSFETs

Radio-Frequency : Bipolar

Radio-Frequency Bipolar Small-Signal Transistors

Radio-Frequency Bipolar Transistors
Dual Radio-Frequency Bipolar Transistors
Two transistors with different characteristics are mounted in a single package.
One can be used for VCO and the other for buffering.
SiGe HBT (Silicon Germanium-Heterojunction Bipolar Transistor)
Radio-frequency characteristics have been improved by using SiGe compound for the base of the bipolar transistor.

Radio-Frequency Bipolar Power Transistors

There is a wide range of high-power transistors available, covering from HF band to VHF/UHF band. They are suitable for radio-frequency high-power amplifiers and boosters.

Radio-Frequency Bipolar Power Transistors

Radio-Frequency Diodes

Variable Capacitance Diodes

These diodes have the capacities variable depending on the value of the reverse bias voltage applied between the anode and the cathode. They are also called VCDs (Variable Capacitance Diodes) or VariCaps. They are used in radio-frequency matching circuits for electronic tuning.

Diodes for Electronic Tuning
Diodes for TV Tuners
Diodes AM/FM Tuners

Radio-Frequency Switching Diodes

Diodes for Band Switch
These diodes are used for radio-frequency signal switches because their P-N junction capacity is very low. They are particularly optimum for switching UHF/VHF frequency band of TV tuners.
PIN Diodes
These diodes have an intrinsic semiconductor layer free from diffused impurities in the middle of regular P-N junction. They are optimum for automatic gain control circuits which adjust excessive input, because they are capable of controlling serial resistance by the forward current.

Radio-Frequency Schottky Barrier Diodes

Schottky Barrier Diodes for Mixer
Making use of rectifying property brought about by contact of a metal and a semiconductor, in place of P-N junction, these diodes are activated by a majority carrier. They are suitable for radio-frequency signal mixer circuits because the forward voltage is low and the reverse recovery time is short.

Small-Signal MMIC (Radio-Frequency Cell Pack)

This is a high-frequency IC which incorporates and integrates the circuits, such as an amplifier, mixer, etc., required for mobile communication into a small surface mounting package. With less external parts, it is capable of realizing low power consumption, miniaturization, and simplified design.

Wideband Amplifiers
Frequency Converters
Radio-Frequency Oscillators (VCO,TCXO)

Radio-Frequency Power Amplifier ICs

A complete line-up of products is provided, which are available for mobile radio, commercial radio and amateur radio.

MMIC
Modules (Analog)
Modules (Digital)

Topics

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